Hybrid SiC Power Module with Low Power Loss
نویسنده
چکیده
Mitsubishi Electric has developed a 1.7 kV hybrid SiC power module consisting of 6th generation Si-IGBT and SiC Schottky Barrier Diode (SBD). Adopting SiC-SBD enables a significant power loss reduction during the diode turn-off and IGBT turn-on. And adopting of 6th generation IGBT enables the reduction of the IGBT turn-off loss. By using the newly developed chip set, high temperature enduring gel and suitable chip layout, the hybrid SiC module can be operated at 150°C junction temperature. Shigeru Hasegawa et al, Mitsubishi Electric Corporation, Japan, and Eugen Stumpf, Mitsubishi Electric Europe B.V., Ratingen, Germany
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